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| SUD45N05-20L Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) 50 FEATURES ID (A)a 30 30 rDS(on) (W) 0.018 @ VGS = 10 V 0.020 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D Drain Connected to Tab G D S G Top View Order Number: SUD45N05-20L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction)a Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range w w .D w t a S a TC = 25_C TC = 100_C L = 0.1 mH TC = 25_C TA = 25_C e h S ID IDM IS IAR t e U 4 .c m o Symbol VDS VGS Limit 50 "20 30 30 100 43 37 93 75 2.5a - 55 to 175 Unit V A EAR PD TJ, Tstg mJ W _C THERMAL RESISTANCE RATINGS Parameter Free Air, FR4 Board Mount Maximum J Mi Junction-to-Ambient ti t A bi t Maximum Junction-to-Case Notes a. Package limited. b. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70271 S-31724--Rev. F, 18-Aug-03 Free Air, Vertical Mount RthJA RthJC Symbol Limit 60 110 2.0 w w w .D at Sh a ee 4U t om .c Unit _C/W C/W www.vishay.com 1 SUD45N05-20L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 50 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currentb IDSS ID(on) VDS = 50 V, VGS = 0 V, TJ = 125_C VDS = 50 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 43 A, TJ = 125_C VGS = 4.5 V, ID = 43 A Forward Transconductanceb gfs VDS = 15 V, ID = 43 A 20 43 0.018 0.036 0.040 0.020 S W 50 1.0 2.0 "100 1 50 150 A m mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 25 V, RL = 0.6 W ID ^ 43 A, VGEN = 10 V, RG = 2.5 W 0.5 10 10 32 7 VDS = 25 V, VGS = 10 V, ID = 43 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 1800 370 130 43 7 10 3.6 20 20 60 15 ns W 60 nC 3600 pF Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 43 A, VGS = 0 V IF = 43 A, di/dt = 100 A/ms 49 43 1.5 100 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 70271 S-31724--Rev. F, 18-Aug-03 SUD45N05-20L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10, 9, 8, 7, 6 V 80 I D - Drain Current (A) 5V I D - Drain Current (A) 40 30 20 10 0 0 2 4 6 8 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) TC = - 125_C 25_C - 55_C 5 60 50 Transfer Characteristics 60 40 4V 20 3V 0 Transconductance 80 0.04 On-Resistance vs. Drain Current g fs - Transconductance (S) 60 r DS(on) - On-Resistance ( ) TC = - 55_C 0.03 25_C 40 125_C 0.02 VGS = 4.5 V VGS = 10 V 20 0.01 0 0 10 20 30 40 50 60 0.00 0 20 40 60 ID - Drain Current (A) 3000 2500 C - Capacitance (pF) 2000 1500 1000 500 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Crss Ciss ID - Drain Current (A) 10 VDS = 25 V ID = 43 A Capacitance Gate Charge V GS - Gate-to-Source Voltage (V) 8 6 4 Coss 2 0 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Document Number: 70271 S-31724--Rev. F, 18-Aug-03 www.vishay.com 3 SUD45N05-20L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.25 2.00 r DS(on) - On-Resistance ( ) (Normalized) 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 - 50 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) I S - Source Current (A) On-Resistance vs. Junction Temperature VGS = 10 V ID = 20 A 100 Source-Drain Diode Forward Voltage TJ = 150_C TJ = 25_C 10 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) THERMAL RATINGS Maximum Drain Current vs. CaseTemperature 50 200 100 40 I D - Drain Current (A) I D - Drain Current (A) Limited by rDS(on) 100 ms 1 ms 10 ms TC = 25_C Single Pulse 100 ms dc, 1 s Safe Operating Area 30 10 20 1 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.01 10 -4 10 -3 0.02 Normalized Thermal Transient Impedance, Junction-to-Case 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 30 www.vishay.com 4 Document Number: 70271 S-31724--Rev. F, 18-Aug-03 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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